 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Features Applications Bidirectional EMI filtering ESD protection >25k volts Protects two audio lines Cell phones PDAs and notebooks Digital cameras MP3 players and GPS 2FAM-C5R - Integrated Passive & Active Device using CSP General Information The 2FAM-C5R device, manufactured using Thin Film on Silicon technology, provides ESD protection and EMI filtering for the audio port of portable electronic devices such as cell phones, modems and PDAs. The device incorporates two low pass filter channels where each channel has a series 10 ohm resistor assuring a minimum of -25 dB attenuation from 800 MHz to 3 GHz. The device is suitable for EMI filtering of GSM, CDMA, W-CDMA, WLAN and Bluetooth frequencies. Each internal and external port of the two channels includes a TVS diode for ESD protection. The ESD protection provided by the component enables a data port to withstand a minimum 8 KV Contact / 15 KV Air Discharge per the ESD test method specified in IEC 61000-4-2. The device measures 1.00 mm x 1.33 mm and is available in a 5 bump CSP package intended to be mounted directly onto an FR4 printed circuit board. The CSP device meets typical thermal cycle and bend test specifications without the use of an underfill material. SOLDER BUMPS SILICON DIE Electrical & Thermal Characteristics Electrical Characteristics (TA = 25 C unless otherwise noted) Per Line Specification Resistance Capacitance @ 0 V 1 MHz Rated Standoff Voltage Breakdown Voltage @ 1 mA Forward Voltage @ 10 mA Leakage Current @ 3.3 V Filter Attenuation @ 800 - 3000 MHz ESD Protection: IEC 61000-4-2 Contact Discharge Air Discharge Symbol R C VWM VBR VF IR S21 Minimum 8 32 6.0 Nominal 10 40 5.0 0.8 0.1 -30 Maximum 12 48 Unit pF V V V A dB kV 0.5 -25 8 24 A Thermal Characteristics (TA = 25 C unless otherwise noted) Operating Temperature Range Storage Temperature Range Power Dissipation Per Resistor TJ TSTG PD -40 -55 25 25 +85 +150 100 C C mW Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 2FAM-C5R - Integrated Passive & Active Device using CSP Mechanical Characteristics This is a silicon-based device and is packaged using chip scale packaging technology. Solder bumps, formed on the silicon die, provide the interconnect medium from die to PCB. The bumps are arranged on the die in a regular grid formation. The grid pitch is 0.5 mm and the dimensions for the packaged device are shown below. 0.432 - 0.559 (0.017 - 0.022) 0.3 DIA. (0.012) A1 C1 0.435 (0.017) B2 0.435 (0.017) A3 C3 1.285 - 1.375 (0.051 - 0.054) 0.330 - 0.457 (0.013 - 0.018) 0.180 - 0.280 (0.007 - 0.011) 0.50 (0.020) 0.971 - 1.001 (0.038 - 0.039) 0.180 - 0.280 (0.007 - 0.011) DIMENSIONS = MILLIMETERS (INCHES) Reliability Data Reliability data is gathered on an ongoing basis for Bourns(R) Integrated Passive and Active Devices. "Package level" testing of the integrity of the solder joint is carried out on an independent Daisy-Chain test device. A 25-Pin Daisy Chain component is available from Bourns for this purpose (part number 2TAD-C25R). This is a 5 x 5 array featuring 0.5 mm pitch solder bumps. The Distance to Neutral Point (DNP) on that component is larger than that of the 2FAM-C5R and is thus deemed suitable for Thermal Cycle testing. "Silicon level" reliability performance is based on similarity to other integrated passive CSP devices from Bourns. Frequency Response 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 0.1 1 10 100 1000 10000 0 Volts Gain (dB) 2.5 Volts Frequency (MHz) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 2FAM-C5R - Integrated Passive & Active Device using CSP Block Diagram The CSP device block diagram below includes the pin names and basic electrical connections associated with each channel. PCB Design and SMT Processing Please consult the "Bourns Design Guide Using CSP" for notes on PCB design and SMT Processing. EXT1 R1: 10 OHMS INT1 How to Order GND 2 FAM - C5R__ Thinfilm Model Chipscale No. of Solder Bumps Packaging Option R = Tape and Reel Packaged 3000 pcs. / 7 " reel EXT2 INT2 R2: 10 OHMS Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 2FAM-C5R - Integrated Passive & Active Device using CSP Device Pin Out The pin-out for the device is shown below with the bumps facing up. 1 EXT2 2 3 INT2 C B EXT1 A GND INT1 Pin Out A1 C1 B2 Function EXT1 EXT2 GND Pin Out A3 C3 Function INT1 INT2 Packaging The surface mount product is packaged in an 8 mm x 4 mm Tape and Reel format per EIA-481 standard. TOP SIDE VIEW (INTO COMPONENT POCKET) DIMENSIONS = 0.3 0.05 (.01 .002) 2.0 0.05 (.08 .002) 4.0 0.1 (.16 .004) 1.5 0.1/-0 (.06 .004/-0) DIA. 1.75 0.1 (.07 .004) MILLIMETERS (INCHES) R 0.3 MAX. (0.01) 8.0 0.3 (.31 .01) 3.5 0.05 (.14 .002) 1.18 0.1 (.05 .004) 4.0 0.1 (.16 .004) R 0.25 TYP. (0.010) 0.76 0.1 (.03 .004) 1.52 0.1 (.06 .004) ORIENTATION OF COMPONENT IN POCKET BACKSIDE FACING UP Reliable Electronic Solutions Asia-Pacific: TEL +886- (0)2 25624117 * FAX +886- (0)2 25624116 Europe: TEL +41-41 768 5555 * FAX +41-41 768 5510 North America: TEL +1-951 781-5492 * FAX +1-951 781-5700 www.bourns.com COPYRIGHT(c) 2004, BOURNS, INC. LITHO IN U.S.A. 08/04 e/IPA0411 2FAM-C5R REV. B, 9/04 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. |
Price & Availability of 2FAM-C5R
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |